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1 May 2008 A MEMS-based infrared emitter array for combat identification
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A high-visibility infrared array emitter for identification and display screen has been demonstrated. The silicon-based MEMS Infrared emitter was fabricated on silicon-on-insulator (SOI) wafer. The infrared emitter cell can be operated at 1100K with a total power of 2.5W, and the modulation frequency can reach to 50Hz at 50 modulation depth. The Infrared array emitters consist of 1*2, 2*2 and 3*3 emitter cells, respectively, which can be made as an infrared indicator or display screen for object identification and information displaying with a recognition ranges determined by input power. The experiments shown that due to the problems of structure and stress, the modulation frequency and lifetime of the infrared array emitter were reduced with increasing array dimension.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haisheng San, Xuyuan Chen, Peng Xu, Fangqiang Li, and Meiying Cheng "A MEMS-based infrared emitter array for combat identification", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69401T (1 May 2008);


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