A MEMS-based infrared emitter array for combat identification

Haisheng San; Xuyuan Chen; Peng Xu; Fangqiang Li; Meiying Cheng

doi:10.1117/12.777259

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1 May 2008 A MEMS-based infrared emitter array for combat identification

Haisheng San; Xuyuan Chen; Peng Xu; Fangqiang Li; Meiying Cheng

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Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 69401T (2008) https://doi.org/10.1117/12.777259
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

A high-visibility infrared array emitter for identification and display screen has been demonstrated. The silicon-based MEMS Infrared emitter was fabricated on silicon-on-insulator (SOI) wafer. The infrared emitter cell can be operated at 1100K with a total power of 2.5W, and the modulation frequency can reach to 50Hz at 50 modulation depth. The Infrared array emitters consist of 1*2, 2*2 and 3*3 emitter cells, respectively, which can be made as an infrared indicator or display screen for object identification and information displaying with a recognition ranges determined by input power. The experiments shown that due to the problems of structure and stress, the modulation frequency and lifetime of the infrared array emitter were reduced with increasing array dimension.

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Haisheng San, Xuyuan Chen, Peng Xu, Fangqiang Li, and Meiying Cheng "A MEMS-based infrared emitter array for combat identification", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69401T (1 May 2008); https://doi.org/10.1117/12.777259

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