17 April 2008 Amorphous silicon based large format uncooled FPA microbolometer technology
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Abstract
This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.
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T. Schimert, T. Schimert, J. Brady, J. Brady, T. Fagan, T. Fagan, M. Taylor, M. Taylor, W. McCardel, W. McCardel, R. Gooch, R. Gooch, S. Ajmera, S. Ajmera, C. Hanson, C. Hanson, A. J. Syllaios, A. J. Syllaios, } "Amorphous silicon based large format uncooled FPA microbolometer technology", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694023 (17 April 2008); doi: 10.1117/12.784661; https://doi.org/10.1117/12.784661
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