17 April 2008 Amorphous silicon based large format uncooled FPA microbolometer technology
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This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Schimert, T. Schimert, J. Brady, J. Brady, T. Fagan, T. Fagan, M. Taylor, M. Taylor, W. McCardel, W. McCardel, R. Gooch, R. Gooch, S. Ajmera, S. Ajmera, C. Hanson, C. Hanson, A. J. Syllaios, A. J. Syllaios, } "Amorphous silicon based large format uncooled FPA microbolometer technology", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694023 (17 April 2008); doi: 10.1117/12.784661; https://doi.org/10.1117/12.784661

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