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18 April 2008 Advanced HgCdTe technologies and dual-band developments
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The Molecular Beam Epitaxy (MBE) approach was under investigation for several years to prepare both the very large array fabrication and the 3rd generation developments. This large step in Infrared (IR) detector mass production is also necessary for producing third generation of IR detectors such as bicolor and dual band FPAs which use more complex multi hetero-junctions architectures. These new advanced HgCdTe technologies necessary for third generation developments have been validated and their producibility have been improved. As far as dual band IR detectors are concerned, the technologies are developed and a full TV format (24μm pixel pitch) is currently under development with a first application in bicolor within medium waveband. Future improvements including avalanche photodiodes (APD), will lead to more compact systems as well as a low cost approach.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe Tribolet, Gérard Destefanis, Philippe Ballet, Jacques Baylet, Olivier Gravrand, and Johan Rothman "Advanced HgCdTe technologies and dual-band developments", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69402P (18 April 2008);


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