22 April 2008 Dual waveband MW/LW focal plane arrays grown by MOVPE on silicon substrates
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Abstract
The use of silicon substrates has been very successful for producing large area focal plane arrays operating in the MWIR waveband using the MBE growth process. More recently, promising results have been obtained in the LWIR waveband using a MOVPE growth process on a buffered silicon substrate. The MOVPE growth process is also suitable for more complex multi-layer structures and we have now used this technique to produce our first MW/LW dual waveband focal plane arrays. In this paper we show that close to background limited performance can be achieved in both wavebands, however the main challenge with arrays grown on silicon is to obtain low defect counts. These first arrays are promising in this respect and operabilities of 99.4% and 98.2% have been achieved in the MWIR band and LWIR band respectively. The availability of dual waveband arrays allows the correlation of defects in the two wavebands to be compared. In general, we find that the correlation is low and this suggests that defect generation mechanisms which would affect both bands (such as threading dislocations) are currently not the main source of defective devices in MOVPE grown devices on silicon.
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James W. Edwards, James W. Edwards, Jean Giess, Jean Giess, Andrew Graham, Andrew Graham, Neil T. Gordon, Neil T. Gordon, Janet E. Hails, Janet E. Hails, David J. Hall, David J. Hall, Alan J. Hydes, Alan J. Hydes, David J. Lees, David J. Lees, } "Dual waveband MW/LW focal plane arrays grown by MOVPE on silicon substrates", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69402Q (22 April 2008); doi: 10.1117/12.786619; https://doi.org/10.1117/12.786619
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