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5 May 2008 Dual-Band MW/LW IRFPAs made from HgCdTe grown by MOVPE
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This paper describes the design, fabrication and performance of dual-band MW/LW infrared detectors made from HgCdTe (MCT) grown by Metal Organic Vapour Phase Epitaxy (MOVPE). The detectors are staring, focal plane arrays consisting of HgCdTe mesa-diode arrays bump bonded to silicon read-out circuits. Each mesa has one connection to the ROIC and the bands are selected by varying the applied bias. Arrays of 320x256 pixels on a 30 μm pitch have performed exceedingly well. For example, arrays with a cut-off wavelength of 5 μm in the MW (mid-wave) band and 10 μm in the LW (long-wave) band have median NETDs of 10 and 17 mK and defect levels of 0.3% and 0.05%, in the MW and LW bands respectively. Interestingly the LW defect level is often lower than the MW defect level and the defects are not correlated; i.e. a pixel that is defective in the MW band is usually not defective in the LW band. Arrays of 640x512 pixels on a 24 μm pitch have been developed. These use a read-out integrated circuit (ROIC) that has two capacitors per pixel and the ability to switch bands during a frame giving quasi-simultaneous images. The performance of these arrays has been excellent with NETDs of 14mK in the MW band and 23mK in the LW band. Dual band-pass filters have been designed and built into a detector.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. G. Price, C. L. Jones, L. G. Hipwood, C. J. Shaw, P. Abbot, C. D. Maxey, H. W. Lau, J. Fitzmaurice, R. A. Catchpole, M. Ordish, P. Thorne, H. J. Weller, R. C. Mistry, K. Hoade, A. Bradford, D. Owton, and P. Knowles "Dual-Band MW/LW IRFPAs made from HgCdTe grown by MOVPE", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69402S (5 May 2008);


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