5 May 2008 Dual-Band MW/LW IRFPAs made from HgCdTe grown by MOVPE
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Abstract
This paper describes the design, fabrication and performance of dual-band MW/LW infrared detectors made from HgCdTe (MCT) grown by Metal Organic Vapour Phase Epitaxy (MOVPE). The detectors are staring, focal plane arrays consisting of HgCdTe mesa-diode arrays bump bonded to silicon read-out circuits. Each mesa has one connection to the ROIC and the bands are selected by varying the applied bias. Arrays of 320x256 pixels on a 30 μm pitch have performed exceedingly well. For example, arrays with a cut-off wavelength of 5 μm in the MW (mid-wave) band and 10 μm in the LW (long-wave) band have median NETDs of 10 and 17 mK and defect levels of 0.3% and 0.05%, in the MW and LW bands respectively. Interestingly the LW defect level is often lower than the MW defect level and the defects are not correlated; i.e. a pixel that is defective in the MW band is usually not defective in the LW band. Arrays of 640x512 pixels on a 24 μm pitch have been developed. These use a read-out integrated circuit (ROIC) that has two capacitors per pixel and the ability to switch bands during a frame giving quasi-simultaneous images. The performance of these arrays has been excellent with NETDs of 14mK in the MW band and 23mK in the LW band. Dual band-pass filters have been designed and built into a detector.
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J. P. G. Price, J. P. G. Price, C. L. Jones, C. L. Jones, L. G. Hipwood, L. G. Hipwood, C. J. Shaw, C. J. Shaw, P. Abbot, P. Abbot, C. D. Maxey, C. D. Maxey, H. W. Lau, H. W. Lau, J. Fitzmaurice, J. Fitzmaurice, R. A. Catchpole, R. A. Catchpole, M. Ordish, M. Ordish, P. Thorne, P. Thorne, H. J. Weller, H. J. Weller, R. C. Mistry, R. C. Mistry, K. Hoade, K. Hoade, A. Bradford, A. Bradford, D. Owton, D. Owton, P. Knowles, P. Knowles, } "Dual-Band MW/LW IRFPAs made from HgCdTe grown by MOVPE", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69402S (5 May 2008); doi: 10.1117/12.784483; https://doi.org/10.1117/12.784483
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