1 May 2008 High-speed transparent flexible electronics
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A high-speed flexible transistor made with an ultrapure carbon nanotube (CNT) solution is reported. The carrier transport layer of the CNT-based flexible transistor is formed at room temperature by dispensing a tiny droplet of an electronics-grade CNT solution. Ultra high field-effect mobility of ~ 48,000 cm2/(V×s) has been demonstrated on a thin-film field effect transistor (TFT). A simple trans-impedance voltage follower circuit was made using the CNT-TFT on a transparency film. The circuit exhibited a high modulation speed of 312 MHz and a large current-carrying capacity beyond 20 mA. The transparency and the sheet resistance of the CNT-film were also characterized at different wavelengths. The ink-jet printing-compatible process would enable mass production of large-area electronic circuits on virtually any desired flexible substrate at low cost and high throughput.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jarrod Vaillancourt, Jarrod Vaillancourt, Xuejun Lu, Xuejun Lu, Xuliang Han, Xuliang Han, Daniel C. Janzen, Daniel C. Janzen, Wu-Sheng Shih, Wu-Sheng Shih, "High-speed transparent flexible electronics", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69403A (1 May 2008); doi: 10.1117/12.777348; https://doi.org/10.1117/12.777348

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