1 May 2008 FPA development: from InGaAs, InSb, to HgCdTe
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Abstract
This paper reports preliminary results obtained on 1.7µm InGaAs, Vis-InGaAs, extended-wavelength InGaAs, InSb, and HgCdTe 320x256 FPAs fabricated at Judson. Test structures designed to characterize fundamental detector parameters are presented. FPA performance and imaging analysis are reported. Possible performance improvements by means of architectural design and fabrication process refinement are described. Future development plan and preliminary experimental results on FPAs with larger format and smaller pitch are also discussed. Relatively low dark current and NEI values, as well as high operability, are achieved for 1.7µm InGaAs FPAs at room temperature. High quantum efficiency in the visible wavelength range is achieved for Vis-InGaAs FPAs. Low NETD values are achieved for InSb FPAs at LN2 and MWIR HgCdTe FPAs at -70°C (203°K).
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Henry Yuan, Henry Yuan, Gary Apgar, Gary Apgar, Jongwoo Kim, Jongwoo Kim, Joyce Laquindanum, Joyce Laquindanum, Varsha Nalavade, Varsha Nalavade, Paul Beer, Paul Beer, Joe Kimchi, Joe Kimchi, Ted Wong, Ted Wong, } "FPA development: from InGaAs, InSb, to HgCdTe", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69403C (1 May 2008); doi: 10.1117/12.782735; https://doi.org/10.1117/12.782735
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