16 April 2008 Performance of 64x64 MWIR super lattice light-emitting diode (SLED) array for IR scene generation
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Abstract
We designed and fabricated 64x64 supper lattice light emitting diode (SLED) array with peak emission wavelength of 3.8 micron. The light emission is observed from the bottom side of the device through the substrate. The CMOS driver circuit is fabricated in the 130 nm IBM 8HP SiGe process. The unit cells were designed to source up to 100mA to the LED. These unit cells can be individually addressable, and have analog drive and memory that can operate at a 1 kHz array refresh rate. We use supper lattice epitaxial active region LED structures grown on n-type GaSb substrates. After initial mesa etching and contact metal deposition, the LED array is flip chip mounted on the LCC package. The light emission is observed from the LED array by InSb focal plane MWIR camera and the apparent black body temperature is measured.
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Naresh C. Das, Fouad Kiamilev, J. P. Prineas, J. T. Olesberg, E. J. Koerperick, L. M. Murray, and T. F. Boggess "Performance of 64x64 MWIR super lattice light-emitting diode (SLED) array for IR scene generation", Proc. SPIE 6942, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XIII, 69420I (16 April 2008); doi: 10.1117/12.782652; https://doi.org/10.1117/12.782652
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