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28 April 2008 Porous silicon near room temperature nanosensor covered by TiO2 or ZnO thin films
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Abstract
Hydrogen nanosensor working near room temperature made of porous silicon covered by the TiO2-x or ZnO thin film was realized. Porous silicon layer was formed by electrochemical anodization on a p- and n-type silicon surface. Thereafter, n-type TiO2-x and ZnO thin films were deposited onto the porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. Platinum catalytic layer and gold electric contacts were for further measurements deposited onto obtained structures by ion-beam sputtering. The sensitivity of manufactured structures to 1000-5000 ppm of hydrogen was studied. Results of measurements showed that it is possible to realize a hydrogen nanosensor which has relatively high sensitivity and selectivity to hydrogen, durability, and short recovery and response times. Such a sensor can also be a part of silicon integral circuit and work near room temperatures.
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Vladimir M. Aroutiounian, Valery M. Arakelyan, Vardan Galstyan, Khachatur Martirosyan, and Patrick Soukiassian "Porous silicon near room temperature nanosensor covered by TiO2 or ZnO thin films", Proc. SPIE 6943, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense VII, 69430H (28 April 2008); https://doi.org/10.1117/12.777345
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