17 April 2008 Iodine based compound semiconductors for room temperature gamma-ray spectroscopy
Author Affiliations +
Iodine-based compound semiconductors may allow one to build a portable gamma-ray spectrometer with improved efficiency and energy resolution compared to many other portable spectrometer devices. Iodine-based semiconductors have a wide band gap that allows these detectors to operate without any cooling mechanism. Bismuth iodide (BiI3), lead iodide (PbI2) and mercuric iodide (HgI2) have theoretical gamma-ray detection efficiencies approximately 2-3 times higher than CdZnTe, the current compound semiconductor material proposed for use in several homeland/national security applications, over the range of 200-3000 keV. At 662 keV, BiI3, HgI2 and PbI2 have theoretical intrinsic photopeak efficiencies of 16.8%, 19.3% and 19.9%, respectively, while CdZnTe has a photopeak efficiency of 9.03%. In addition, gamma-ray spectrometers made from iodine-based compound semiconductor materials have demonstrated energy resolutions (FWHM) less than 2% at 662 keV. A 2% FWHM represents a significant improvement over many of today's scintillator-based radiation detectors used for homeland/national security purposes. We present some fundamental challenges in working with iodine-based semiconductors, including crystal growth issues and properties of the materials limiting radiation detector size, and the need for advanced electrode designs. Finally, we present elementary measurements illustrating the detection capabilities of iodine-based compound semiconductor materials.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Azaree T. Lintereur, Azaree T. Lintereur, Wei Qiu, Wei Qiu, Juan C. Nino, Juan C. Nino, James E. Baciak, James E. Baciak, } "Iodine based compound semiconductors for room temperature gamma-ray spectroscopy", Proc. SPIE 6945, Optics and Photonics in Global Homeland Security IV, 694503 (17 April 2008); doi: 10.1117/12.777402; https://doi.org/10.1117/12.777402


Sub MeV all sky survey with a compact Si CdTe...
Proceedings of SPIE (July 23 2014)
Improving neutron detection in semiconducting 6LiInSe2
Proceedings of SPIE (September 04 2014)
Thermal conductivity studies of CdZnTe with varying Te excess
Proceedings of SPIE (September 29 2016)
Evaluation of TlBr detectors with Tl electrodes
Proceedings of SPIE (September 03 2008)
Fabrication of CdTe detectors in a new p i n...
Proceedings of SPIE (October 18 1999)
Bismuth tri-iodide radiation detector development
Proceedings of SPIE (September 17 2009)

Back to Top