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14 January 1987 In-Se Based Phase Change Reversible Optical Recording Film
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Abstract
In-Se based amorphous-crystalline phase change recording films are analysed in terms of structure, optical properties, crystallization speed, and crystallization activation energy. Crystallization by a laser beam is possible by a 0.2μs pulse. Crystallization temperature(heating rate 5°/C min.) measured by using a differential scanning calorimeter is 135°C and crystallization activation energy is calculated to be 2.6eV. The life of the amorphous state is estimated6 to be longer than 10 years at 60°C. The phase change cycles can continue even after 10 cycles in stationary state experiments for test samples. In addition, possibility of single beam overwrite(rewriting without prior erasing) is verified by using a 1.6 μm-diameter round laser beam spot on a 5-inch-diameter disk rotating at 2400rpm. The laser beam power is modulated at 1.77MHz and 0.88MHz between an amorphizing power level and a crystallizing power level. The amorphizing power level is 14mW and the crystallizing power level is 7mW. The experimental results show that the overwrite the same as magnetic disk is possible by using the In-Se based recording film.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Motoyasu Terao, Tetsuya Nishida, Yasushi Miyauchi, Shinkichi Horigome, Toshirnitsu Kaku, and Norio Ohta "In-Se Based Phase Change Reversible Optical Recording Film", Proc. SPIE 0695, Optical Mass Data Storage II, (14 January 1987); doi: 10.1117/12.936824; https://doi.org/10.1117/12.936824
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