Paper
16 April 2008 Single photon counting Geiger mode InGaAs(P)/InP avalanche photodiode arrays for 3D imaging
Rengarajan Sudharsanan, Ping Yuan, Joseph Boisvert, Paul McDonald, Takahiro Isshiki, Shoghig Mesropian, Ed Labios, Michael Salisbury
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Abstract
We have designed, fabricated and characterized InGaAs/InP Geiger-mode avalanche photodiode (APD) 32 x 32 arrays optimized for operation at both 1.06 and 1.55 μm wavelengths Single element devices with a thick multiplication layer thickness showed dark count rate as low as 60 kHz at a 3 V overbias, while photon detection efficiencies at a wavelength of 1.55 μm exceed 30% at 2 V overbias. Back illuminated 32 x 32 detector arrays exhibited breakdown uniformity of greater than 97% and excellent dark current uniformity. Detector arrays were integrated with low-noise read-out integrated circuits for an imaging demonstration. 3D imaging was demonstrated using 1.06 micron detector arrays.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rengarajan Sudharsanan, Ping Yuan, Joseph Boisvert, Paul McDonald, Takahiro Isshiki, Shoghig Mesropian, Ed Labios, and Michael Salisbury "Single photon counting Geiger mode InGaAs(P)/InP avalanche photodiode arrays for 3D imaging", Proc. SPIE 6950, Laser Radar Technology and Applications XIII, 69500N (16 April 2008); https://doi.org/10.1117/12.778278
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Cited by 16 scholarly publications.
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KEYWORDS
Detector arrays

Photodetectors

Avalanche photodetectors

Cameras

Stereoscopy

Avalanche photodiodes

LIDAR

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