16 April 2008 Single photon counting Geiger mode InGaAs(P)/InP avalanche photodiode arrays for 3D imaging
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Abstract
We have designed, fabricated and characterized InGaAs/InP Geiger-mode avalanche photodiode (APD) 32 x 32 arrays optimized for operation at both 1.06 and 1.55 μm wavelengths Single element devices with a thick multiplication layer thickness showed dark count rate as low as 60 kHz at a 3 V overbias, while photon detection efficiencies at a wavelength of 1.55 μm exceed 30% at 2 V overbias. Back illuminated 32 x 32 detector arrays exhibited breakdown uniformity of greater than 97% and excellent dark current uniformity. Detector arrays were integrated with low-noise read-out integrated circuits for an imaging demonstration. 3D imaging was demonstrated using 1.06 micron detector arrays.
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Rengarajan Sudharsanan, Rengarajan Sudharsanan, Ping Yuan, Ping Yuan, Joseph Boisvert, Joseph Boisvert, Paul McDonald, Paul McDonald, Takahiro Isshiki, Takahiro Isshiki, Shoghig Mesropian, Shoghig Mesropian, Ed Labios, Ed Labios, Michael Salisbury, Michael Salisbury, } "Single photon counting Geiger mode InGaAs(P)/InP avalanche photodiode arrays for 3D imaging", Proc. SPIE 6950, Laser Radar Technology and Applications XIII, 69500N (16 April 2008); doi: 10.1117/12.778278; https://doi.org/10.1117/12.778278
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