30 April 2008 Cadmium zinc telluride (CZT) nanowire sensors for detection of low energy gamma-ray detection
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Abstract
Bulk single crystals of CdZnTe compound semiconductor is used for room temperature radiation detection in commercial radiation sensors. A large volume of detector material with low defect density is required for increasing the detection efficiency. Manufacture of such a bulky detector-quality material with low defect density is expensive. In this communication, synthesis of nanowires arrays of CdZnTe that can be used for detecting low energy radiation is reported for the first time. CdZnTe ternary compound semiconductor, referred as CZT, was electrodeposited in the form of nanowires onto a TiO2 nanotubular template in non-aqueous electrolytes using a pulse-reverse process at 130 °C. Very high electrical resistivity of the CZT nanowires (in the order of 1010 Ω-cm) was obtained. Such a high resistivity was attributed to the presence of deep defect states such as cadmium vacancies created by the anodic cycle of the pulse-reverse electrodeposition process. Stacks of series connected CZT nanowire arrays were impressed with different bias potentials. The leakage current was in the order of tens of PicoAmperes. When exposed to a radiation source (Am -241, 60 keV), the current flow in the circuit increased. The preliminary results indicate that the CZT nanowire arrays can be used as radiation detector materials at room temperature with a much low bias potential (0.7 - 2.3 V) as against 300 - 500 V applied to the bulk detector materials.
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T. Gandhi, K. S. Raja, M. Misra, "Cadmium zinc telluride (CZT) nanowire sensors for detection of low energy gamma-ray detection", Proc. SPIE 6959, Micro (MEMS) and Nanotechnologies for Space, Defense, and Security II, 695904 (30 April 2008); doi: 10.1117/12.771310; https://doi.org/10.1117/12.771310
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