30 April 2008 Carbon nanotube switches for communication and memory applications
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The development of carbon nanotube-based nanoelectromechanical (NEM) switches is described in this work for their potential application in communication and memory systems. Our first NEM structure consists of single walled nanotubes (SWNTs) suspended over shallow trenches in a SiO2 layer, with a Nb pull electrode beneath. DC measurements of these devices show well-defined ON and OFF states as the tube is actuated electrostatically at a few volts. For high frequency applications, electromagnetic modeling of these devices was performed using FEMLAB to calculate the quasi-static capacitance. An equivalent circuit of our switch was developed from which the swept frequency response was simulated up to 100 GHz in the ON and OFF states. A second NEM switch structure, where the tubes are perpendicular to the substrate is also discussed, which is primarily being developed for nonvolatile memory applications. Here, the growth of multi-walled nanotubes (MWNTs) from deep nanopores is described using thermal chemical vapor deposition (CVD) and plasma-enhanced (PE) CVD with Fe and Ni catalyst, respectively, in preparation for the formation of a vertical switch architecture.
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Anupama B. Kaul, Anupama B. Kaul, Larry Epp, Larry Epp, Eric W. Wong, Eric W. Wong, Robert Kowalczyk, Robert Kowalczyk, "Carbon nanotube switches for communication and memory applications", Proc. SPIE 6959, Micro (MEMS) and Nanotechnologies for Space, Defense, and Security II, 695909 (30 April 2008); doi: 10.1117/12.782130; https://doi.org/10.1117/12.782130

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