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30 April 2008 ZnO nanostructures for optoelectronic applications
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Abstract
In this Paper we present growth and characterization of ZnO nanowires on wideband gap substrates, such as SiC and GaN. Experimental results on the ZnO nanowires grown on p-SiC and p-GaN are presented with growth morphology, structure analysis, and dimensionality control. We also present experimental results on individual nanowires such as I-V measurements and UV sensitivity measurements with use of polymer coating on ZnO nanowires. The ZnO nanowires can be used for a variety of nanoscale optical and electronics applications.
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Ashok K. Sood, Yash R. Puri, Wenjie Mai, Puxian Gao, Changshi Lao, Zhong L. Wang, Dennis L. Polla, and Martin B. Soprano "ZnO nanostructures for optoelectronic applications", Proc. SPIE 6959, Micro (MEMS) and Nanotechnologies for Space, Defense, and Security II, 69591A (30 April 2008); doi: 10.1117/12.784458; https://doi.org/10.1117/12.784458
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