11 March 2008 Stress effect on electronic characteristics in heterojunction of (n+)nanocrystalline/(p+)crystalline Si
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698403 (2008) https://doi.org/10.1117/12.792152
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
A heterojunction of heavy phosphorus doped hydrogenated nanocrystalline Si (nc-Si:H) film with p+-type crystalline Si wafer was prepared and measured to investigate stress effect on electronic characteristics. According to electrical experiments, the yielded structure was demonstrated as a semiconductor backward diode. Energy band gap of nc-Si:H was inferred to equal that of amorphous Si:H because nanocrystals imbedded in amorphous Si:H matrices. Mechanical stress effect on electronic characteristics for the operated unit was interpreted by stress-induced defect states since a mass of defects distributed in inhomogenous material. Reverse current showing good linearly dependent on applied stress with a effectual method of conversing mechanical signal to electronic one before breakdown was indicated.
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Wensheng Wei, "Stress effect on electronic characteristics in heterojunction of (n+)nanocrystalline/(p+)crystalline Si", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698403 (11 March 2008); doi: 10.1117/12.792152; https://doi.org/10.1117/12.792152
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