11 March 2008 Determining band offset and interface charge density of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode by C-V matching method
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840B (2008) https://doi.org/10.1117/12.792188
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
In this paper, we report the band offset and interface charge density properties of the nc-Si:H(n)/c-Si(p) heterojunction (HJ) diode by the capacitance-voltage (C-V) measurement and theoretical modeling. By employing the ideal anisotype HJ capacitance model and numerical C-V matching method, the band offset and heterostructure interface charge density of the nc-Si:H/c-Si HJ have been obtained and analyzed. An interface charge density on the order of 1011 cm-2 is estimated via the numerical C-V matching technique, and the low interface defect density has also been confirmed by the frequency insensitive C-f results.
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J. J. Lu, Z. Z. Jiang, J. Chen, Y. L. He, W. Z. Shen, "Determining band offset and interface charge density of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode by C-V matching method", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840B (11 March 2008); doi: 10.1117/12.792188; https://doi.org/10.1117/12.792188
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