11 March 2008 Weak localization in indium nitride films
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840D (2008) https://doi.org/10.1117/12.792265
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
We have studied the weak localization (WL) effects in the electron accumulation layer on InN surface. Both the spin-orbit relaxation time τso and the electron-phonon scattering time τe-ph have been extracted from the WL analysis. We have observed that 1/τso increase with disorder and τe-ph exhibits a tendency to change gradually from the characteristic dependence 1/τe-phT3 in the pure case to the form of T2l-1 with increasing disorder.
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X. Z. Yu, Z. Z. Jiang, Y. Yang, W. Pan, W. Z. Shen, "Weak localization in indium nitride films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840D (11 March 2008); doi: 10.1117/12.792265; https://doi.org/10.1117/12.792265
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