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11 March 2008 High density Si nanodots: fabrication and properties
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840E (2008) https://doi.org/10.1117/12.792268
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
We propose an approach to achieve single layer of Si nanodots arrays on insulating layer by using KrF pulsed excimer laser irradiation on ultra-thin hydrogenated amorphous silicon films followed by thermal annealing. Under the suitable fabrication conditions, the area density of formed Si nanostructures can be higher than 1011cm-2 as revealed by AFM images. The size of formed Si nanodots is 3-4 nm for sample with initial a-Si:H film thickness of 4 nm. Room temperature visible light emission can be observed from laser irradiated a-Si:H film after thermal annealing. The results on electron field emission properties were also presented in this paper.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Xu, J. Zhou, X. Li, Z. Cen, D. Chen, W. Li, L. Xu, Z. Ma, and K. Chen "High density Si nanodots: fabrication and properties", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840E (11 March 2008); https://doi.org/10.1117/12.792268
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