11 March 2008 The structural properties of O and B-O ion implanted diamond films
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840Q (2008) https://doi.org/10.1117/12.792354
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
The structural properties of B-O and O-implanted diamond films are investigated by using X-ray diffraction (XRD) and Raman spectrum. The results show that a sharp (111) peak of diamond can be found in XRD pattern after annealing under higher temperature, indicating the damaged diamond lattice produced by ion implantation has been restored. The calculated grain size of B-O co-implanted diamond films is smaller than that of O-implanted diamond under 1000 °C annealing, implying the introduction of boron into O-implanted diamond can hinder the grain growth under high temperature annealing. Raman measurements show that higher temperature annealing can recover the damaged lattice.
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X. J. Hu, X. J. Hu, J. S. Ye, J. S. Ye, Q. S. Lu, Q. S. Lu, G. Q. Zheng, G. Q. Zheng, } "The structural properties of O and B-O ion implanted diamond films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840Q (11 March 2008); doi: 10.1117/12.792354; https://doi.org/10.1117/12.792354
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