11 March 2008 Electrical and optical properties of Na+-doped ZnO thin films prepared by sol-gel method
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840U (2008) https://doi.org/10.1117/12.792359
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Na+-doped ZnO thin films (Zn1-xNaxO, x=0-0.20) were prepared on Si<100> substrate by sol-gel method using zinc acetate and sodium carbonate as starting materials. The electrical properties, including the conducting type and the carrier concentration, as well as the optical properties of the so-obtained films were investigated by four-point probe van der Pauw method and photoluminescence (PL) spectroscopy. After doping Na+, the conductive type of ZnO films changed to p from n-type, indicating that Na+ can act as an acceptor to occupy the Zn2+ sites in ZnO lattice. The resistivity, Hall mobility, and the hole concentration of the film with x=0.10 were 75.7 Ω•cm, 2.1 cm2/V s and 2.955×1016/cm3, respectively. The PL results showed that there were a narrow near-band-edge (NBE) emission line and a broad deep-level (DL) emission for all the films with and without Na+ dopants. A slight blue-shift from about 383nm to 380nm of NBE line was observed for the films after doping Na+.
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Ying-wei Li, Chun-fang Lin, Xiao Zhou, Ji Ma, Xing-wen Zhu, "Electrical and optical properties of Na+-doped ZnO thin films prepared by sol-gel method", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840U (11 March 2008); doi: 10.1117/12.792359; https://doi.org/10.1117/12.792359
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