11 March 2008 Nitrogen incorporation characteristics of 4H-SiC epitaxial layer
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840V (2008) https://doi.org/10.1117/12.792363
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1580°C, 100 mbar with rotation based on horizontal low-pressure hot-wall CVD (LP-HW-CVD) system to get high quality 4H-SiC epilayers. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with SEM, AFM, XRD and C-V measurement. By testing, the 4H-SiC epitaxial layer has a good crystalline structure and mirror-like surface with few surface defects. N type 4H-SiC epilayers are obtained by in-situ doping of N2. The Uniformity of doping concentration have been tested below 5%.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renxu Jia, Renxu Jia, Yimen Zhang, Yimen Zhang, Yuming Zhang, Yuming Zhang, Yuehu Wang, Yuehu Wang, } "Nitrogen incorporation characteristics of 4H-SiC epitaxial layer", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840V (11 March 2008); doi: 10.1117/12.792363; https://doi.org/10.1117/12.792363
PROCEEDINGS
4 PAGES


SHARE
Back to Top