11 March 2008 Effect of annealing temperature on the structural and optical properties of Al-doped ZnO films by RF magnetron sputtering
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698410 (2008) https://doi.org/10.1117/12.792374
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering. After the deposition, the films were annealed in N2 at several temperatures from 500°C to 800°C for 60 minutes respectively. The crystal structures of the AZO films were characterized and analyzed by X-ray diffraction. The surface morphologies of the films were observed by SEM. The transmission spectra of the films were measured using a spectrophotometer within the range from 200 to 800 nm at room temperature. The results indicate each of the films has a preferential c-axis orientation and the grain size increases with annealing temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics.
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Yuebo Wu, Bo Huang, Liangtang Zhang, Suntao Wu, "Effect of annealing temperature on the structural and optical properties of Al-doped ZnO films by RF magnetron sputtering", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698410 (11 March 2008); doi: 10.1117/12.792374; https://doi.org/10.1117/12.792374
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