11 March 2008 Investigation on the mechanical properties of P-doped nc-Si:H films
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698411 (2008) https://doi.org/10.1117/12.792376
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
This paper reports mechanical properties of P-doped hydrogenated nanocrystalline silicon (nc-Si:H) films prepared by PECVD in different conditions. The basic mechanical properties of nanocrystalline silicon thin films are evaluated from load, hardness and modulus curves using a nanoindentation instrument. The effect of P-doping rate and types of substrates on mechanical properties is discussed. It is indicated that proper phosphorus-doped nanocrystalline silicon films have lower carrying capacity, but they hold ideal interface combination strength and lower surface roughness; Nanocrystalline silicon thin films on glass substrates have better distortion coordination and film-substrate bonding strength compared to films on silicon substrates. In addition, it is also expected that the thickness of thin films can be roughly estimated by the first obvious step's position on the Load-depth curves.
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Li Wang, Jinliang Wang, Jinzhao Lin, Bo Zhou, Hongyong Peng, "Investigation on the mechanical properties of P-doped nc-Si:H films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698411 (11 March 2008); doi: 10.1117/12.792376; https://doi.org/10.1117/12.792376
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