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11 March 2008 Growth of highly (h00) oriented barium strontium titanate films on silicon substrates using conducting LaNiO3 electrode
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698414 (2008) https://doi.org/10.1117/12.793167
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
(Ba,Sr)TiO3 (BST) thin films were deposited on the conducting perovskite LaNiO3 electrode by radio-frequency (rf) magnetron sputtering technique. To investigate the crystalline of BST films, the substrate temperatures (Td) in the range of 100°C-700°C were applied. The transition from amorphous phase to polycrystalline phase for the films occurred at low growth temperature 300°C. When the growth temperature approached 500°C, highly (h00)-oriented films were obtained. The relative dielectric constant (εr) increased rapidly with enhancing growth temperature because of improved crystallinity, and showed slowly increase above 500°C. In addition, the capacitance-voltage characteristics were studied with various growth temperatures. The tunability increased largely with good crystallinity. This can be attributed to increased dielectric constants.
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Y. H. Gao, J. H. Ma, J. L. Sun, X. J. Meng, and J. H. Chu "Growth of highly (h00) oriented barium strontium titanate films on silicon substrates using conducting LaNiO3 electrode", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698414 (11 March 2008); https://doi.org/10.1117/12.793167
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