11 March 2008 Fabrication and properties study of Cu(In1-xGax)Se2 films by vacuum evaporation
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841C (2008) https://doi.org/10.1117/12.792406
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
The Cu(In1-xGax)Se2 (CIGS) thin films were prepared by stacked elemental layers (SEL) method via vacuum evaporation. X-ray diffraction (XRD) analysis showed that the films were consisted of chalcopyrite CIGS phase. Scanning electronic microscopy indicated that the film surface was compact and the grain size was about 1μm. It was found that CIGS film with preparation sequence Ga/In/Cu/Se was of best crystalline quality. Besides, adding Ga greatly improved the crystallinity for all sequences compared with CIS films at the same annealing temperature.
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Ai-min Li, Ai-min Li, Juan Qin, Juan Qin, Wei-min Shi, Wei-min Shi, Guang-pu Wei, Guang-pu Wei, } "Fabrication and properties study of Cu(In1-xGax)Se2 films by vacuum evaporation", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841C (11 March 2008); doi: 10.1117/12.792406; https://doi.org/10.1117/12.792406
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