11 March 2008 Structures and optical properties of indium doped SrTiO3 thin films by oxygen plasma-assisted pulsed laser deposition
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841H (2008); doi: 10.1117/12.792620
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Undoped and In-doped SrInxTi1-xO3(x=0, 0.1, 0.2) films have been deposited on Si(100) and quartz substrates by oxygen plasma-assisted pulsed laser deposition (PLD). Effects of indium doping on the crystallinity and the optical energy band gap of SrTiO3 (STO) films were investigated. Results indicate that undoped STO film is of rather good crystallinity and low defects concentration. However indium doping deteriorates the crystallinity of the STO film, and results in the roughening of the film surface. Moreover the a-axis length monotonically increases when increasing In content. For all the films, the average transmission in the visible wavelength region (λ=400-800nm) is over 75%. The optical energy band gap of STO thin films, measured from transmittance spectra, changes from 3.67eV to 3.93eV by indium doping.
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Yiwen Zhang, Xiaomin Li, Weidong Yu, Xiangdong Gao, Feng Wu, Jinfang Kong, Wenzhong Shen, "Structures and optical properties of indium doped SrTiO3 thin films by oxygen plasma-assisted pulsed laser deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841H (11 March 2008); doi: 10.1117/12.792620; https://doi.org/10.1117/12.792620
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KEYWORDS
Crystals

Indium

Oxygen

Thin films

Transmittance

Pulsed laser deposition

Doping

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