Infrared dielectric properties of BaTiO3 ultrathin films

S. J. Liu; X. Y. Zhao; G. Pan; G. F. Su; Z. M. Huang; J. H. Chu

doi:10.1117/12.792632

11 March 2008 Infrared dielectric properties of BaTiO₃ ultrathin films

S. J. Liu, X. Y. Zhao, G. Pan, G. F. Su, Z. M. Huang, J. H. Chu

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841N (2008) https://doi.org/10.1117/12.792632
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Using high accurate infrared spectroscopic ellipsometry, the infrared dielectric constants of BaTiO₃ ultrathin films are obtained in the temperature ranging from 20 to 150°C, which were deposited on Pt-Ti-SiO₂-Si substrate by radio frequency magnetron sputtering. The high frequency dielectric function of the BaTiO₃ ultrathin films shows the temperature dependence from the tetragonal to the cubic phase transition. The results suggest that the temperature dependence of the BaTiO₃ ultrathin films' infrared dielectric properties should be considered in the technological applications and theoretical investigations.

Citation Download Citation

S. J. Liu, X. Y. Zhao, G. Pan, G. F. Su, Z. M. Huang, and J. H. Chu "Infrared dielectric properties of BaTiO₃ ultrathin films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841N (11 March 2008); https://doi.org/10.1117/12.792632

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