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11 March 2008 Influence of substrate temperature on properties of tin sulfide thin films
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841P (2008) https://doi.org/10.1117/12.792635
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Tin sulfide (SnS) thin films for solar cells were deposited by vacuum evaporation at different substrate temperatures in a range of 20~200°C. The films were characterized with X-ray diffraction (XRD) and scanning electron microscopy (SEM) for structural analysis. The electrical and optical properties were also investigated. Under the substrate temperature of 150°C, the obtained SnS thin film was in orthorhombic structure with a grain size of 0.5 μm and composition of Sn:S =1:1. The measurement results from hot probe method showed p-type nature for the deposited films. Dark-conductivity and photo-conductivity were 0.01Ω-1•cm-1 and 0.08Ω-1•cm-1, respectively. The optical band-gap energy of the films was estimated to be 1.402 eV.
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Yuying Guo, Weimin Shi, Yu Zhang, Linjun Wang, and Guangpu Wei "Influence of substrate temperature on properties of tin sulfide thin films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841P (11 March 2008); https://doi.org/10.1117/12.792635
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