11 March 2008 Investigations on Sb2O3 doped-SnS thin films prepared by vacuum evaporation
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841Q (2008) https://doi.org/10.1117/12.792636
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Tin sulfide (SnS) is one of promising candidate materials for low-cost thin film solar cells because of its high absorption coefficient and suitable band-gap. The aim of this paper is to study the properties of doped-SnS thin films prepared by vacuum evaporation. Sb2O3 was used as the doping source (the weight ratio of Sb2O3 to SnS in the range from 0.1% to 0.8%). And then the Sb2O3-doped SnS thin films were annealed in the hydrogen atmosphere at different temperatures and times. The structure of all the samples was characterized by X-ray diffraction (XRD). The electrical properties of SnS thin films were investigated as well. From the results, the optimum doping content of Sb2O3 was 0.2% in weight, and the resistivity of the doped-SnS film was 42Ω•cm while that of the pure-SnS film was 99Ω•cm. In addition, the film resistivity of Sb2O3-doped SnS film decreased to 24Ω•cm with the best annealing conditions of 400°C and 3 hours.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuying Guo, Yuying Guo, Weimin Shi, Weimin Shi, Yu Zhang, Yu Zhang, Linjun Wang, Linjun Wang, Guangpu Wei, Guangpu Wei, "Investigations on Sb2O3 doped-SnS thin films prepared by vacuum evaporation", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841Q (11 March 2008); doi: 10.1117/12.792636; https://doi.org/10.1117/12.792636
PROCEEDINGS
4 PAGES


SHARE
Back to Top