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11 March 2008 Growth and characterization of Li-doped ZnO thin films on nanocrystalline diamond substrates
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841T (2008) https://doi.org/10.1117/12.792639
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Nanocrystalline diamond(NCD) films with a mean surface roughness of 23.8 nm were grown on silicon substrates in a hot filament chemical vapor deposition(HFCVD) system. Then, Zn1-xLixO (x=0, 0.05, 0.10, 0.15) films were deposited on these NCD films by radio-frequency(RF) reactive magnetron sputtering method. When x was 0.1, the Li-doped ZnO film had a larger resistivity more than 108Ω•cm obtained from Hall effect measurement. All the Zn1-xLixO films had a strong c-axis orientation structure determined by X-ray diffraction (XRD). The above results suggested that the Li-doped ZnO film/NCD structure prepared in this work was attractive for the application of high frequency surface acoustic wave (SAW) devices.
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Jian Huang, Yiben Xia, Linjun Wang, Jinyong Xu, Guang Hu, Xuefeng Zhu, and Weimin Shi "Growth and characterization of Li-doped ZnO thin films on nanocrystalline diamond substrates", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841T (11 March 2008); https://doi.org/10.1117/12.792639
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