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11 March 2008 New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841V (2008) https://doi.org/10.1117/12.792771
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.
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Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, and Teruaki Motooka "New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841V (11 March 2008); https://doi.org/10.1117/12.792771
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