11 March 2008 A methyl BN film by using tris-di-methyl-amino-boron (TMAB) for future Low-K interlayer
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841W (2008) https://doi.org/10.1117/12.792772
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
A silicon-oxide-based porous methyl material such as a porous SiOCH has been investigated as a Low-K film for post 45nm node generation. However, low young modulus of porous Low-K films is serious issues in Cu/Low-K interconnection. We have investigated Low-K material of Boron Nitride containing methyl (Methyl Boron Nitride) by using Tris-di-methyl-amino-boron (TMAB) gas. This paper reports on properties of a Methyl BN film by TMAB. We have succeeded in Low-K material (K value:2.2) with Young modulus >26GPa.
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H. Aoki, S. Tokuyama, M. K. Mazumder, D. Watanabe, C. Kimura, T. Sugino, "A methyl BN film by using tris-di-methyl-amino-boron (TMAB) for future Low-K interlayer", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841W (11 March 2008); doi: 10.1117/12.792772; https://doi.org/10.1117/12.792772
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