11 March 2008 Study of the defects in GaN epitaxial films grown on sapphire by HVPE
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698423 (2008) https://doi.org/10.1117/12.792015
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
In this paper, the defects in hexagonal GaN epitaxial layers grown on (0001) sapphire (Al2O3) substrates by HVPE with a horizontal tube reactor had been studied. The GaN epitaxial layers were etched by means of defect-selective etching (Orthodox etching in molten KOH). The samples were characterized by Scanning Electron Microscopy (SEM) and Cathodoluminescence spectra (CL). From surface morphology and cross-sectional images, the defects could be divided into various types: cracks, low angle grain boundary (LAGB), nano-pipes and dislocations. These different defects were discussed. The cracks were proposed as related to the strain. And the strain could not only come from the lattice mismatch and thermal mismatch between sapphire and GaN layer in their interface, but also from the HVPE growth process. It was found that these screw, mixed and edge type dislocations formed small hexagonal pits after etching. Some pits would be observed in the area near LAGB. Additionally, by CL mapping technique, some non-radiative recombination centers without surface terminations could be probed optically.
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Zhanhui Liu, Zhanhui Liu, Xiangqian Xiu, Xiangqian Xiu, Lin Chen, Lin Chen, Rong Zhang, Rong Zhang, Zili Xie, Zili Xie, Ping Han, Ping Han, Yi Shi, Yi Shi, Shulin Gu, Shulin Gu, Youdou Zheng, Youdou Zheng, } "Study of the defects in GaN epitaxial films grown on sapphire by HVPE", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698423 (11 March 2008); doi: 10.1117/12.792015; https://doi.org/10.1117/12.792015
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