11 March 2008 Fabrication and characterization of Si nanotip arrays for Si-based nano-devices
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698426 (2008) https://doi.org/10.1117/12.792018
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
A simple and efficient technique for fabricating two-dimensional arrays of silicon nanotips by using electron beam lithography (EBL) and reactive ion etching (RIE) was reported. For the RIE processes, two kind of reactive gases, CHF3 and SF6, were used as plasma etching source for Si. The experiment results indicate that the reactive ion etching mechanism is different: the isotropic process for SF6 and anisotropic for CHF3. It is found that the mixed O2/SF6 plasma etching can improve the properties of profile and surface of Si nanotips. Under the condition of ratio ~15%, the 10 nm top size of Si nanotips was obtained.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangao Zhang, Xiangao Zhang, Kui Liu, Kui Liu, Kunji Chen, Kunji Chen, Jun Xu, Jun Xu, Zhongyuan Ma, Zhongyuan Ma, Wei Li, Wei Li, Ling Xu, Ling Xu, Xinfan Huang, Xinfan Huang, } "Fabrication and characterization of Si nanotip arrays for Si-based nano-devices", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698426 (11 March 2008); doi: 10.1117/12.792018; https://doi.org/10.1117/12.792018
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