11 March 2008 Effect of LaNiO3 sol concentration on the structure and dielectric properties of Pb(Zr0.53Ti0.47)O3 thin films grown on LaNiO3 coated Ti substrates
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842C (2008) https://doi.org/10.1117/12.792028
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films were deposited on LaNiO3 (LNO) buffered metal substrates by sol-gel method. The LNO buffer layer also prepared by sol-gel method serves as the template for growing PZT thin films with preferred orientation. The LNO sol is the precursor to prepare the LNO buffer layer. With the decreasing of the LNO sol concentration, the PZT films on LNO layer shows varying intensity of the XRD (100) and (110) orientation, as well as variation of the structural and dielectric properties. The PZT thin films with good dielectric properties can be obtained on LNO buffer layer with LNO-sol of 0.1mol/L.
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Xiaoyan Yang, Xiaoyan Yang, Jinrong Cheng, Jinrong Cheng, Shengwen Yu, Shengwen Yu, Zhongyan Meng, Zhongyan Meng, } "Effect of LaNiO3 sol concentration on the structure and dielectric properties of Pb(Zr0.53Ti0.47)O3 thin films grown on LaNiO3 coated Ti substrates", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842C (11 March 2008); doi: 10.1117/12.792028; https://doi.org/10.1117/12.792028
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