Voltage-controlled change of MIS reflectivity in visible and near infrared band

J. H. Qin; J. H. Ma; Z. M. Huang; J. H. Chu

doi:10.1117/12.792118

11 March 2008 Voltage-controlled change of MIS reflectivity in visible and near infrared band

J. H. Qin, J. H. Ma, Z. M. Huang, J. H. Chu

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842F (2008) https://doi.org/10.1117/12.792118
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Voltage-induced reflective changes of Pt/BLT/Si and Pt/STO/Si are investigated in visible and near infrared band. A theoretic calculation of inversion layer plasmons is set up. The most sensitive optical band and the voltage value interval causing fastest change rate are indicated. Some variance regularities are described, and this study provides the basically theoretical support for the application of an optical readout infrared imaging device: MFIS.

Citation Download Citation

J. H. Qin, J. H. Ma, Z. M. Huang, and J. H. Chu "Voltage-controlled change of MIS reflectivity in visible and near infrared band", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842F (11 March 2008); https://doi.org/10.1117/12.792118

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