11 March 2008 The structural and electrochemical properties of tin oxide films prepared by RF magnetron sputtering
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842H (2008) https://doi.org/10.1117/12.792136
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Tin oxide thin films have been deposited on oxide silicon substrates using a RF magnetron sputtering process with various sputtering power. The crystal structures of the tin oxide thin films were characterized and analyzed by X-ray diffraction. The surface morphology of the films were observed by SEM. The electrochemical properties of the films were also tested by constant current charge and discharge cycle tests. The results of XRD indicate that all the films are crystalline. The results of SEM exhibit that the grain size of surface expands as sputtering power rises.
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Minzhen Cai, Jie Song, Liangtang Zhang, Qihui Wu, Suntao Wu, "The structural and electrochemical properties of tin oxide films prepared by RF magnetron sputtering", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842H (11 March 2008); doi: 10.1117/12.792136; https://doi.org/10.1117/12.792136
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