11 March 2008 Study of final polishing slurry for silicon substrate in ULSI
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842I (2008) https://doi.org/10.1117/12.792138
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Based on the analysis of mechanism of silicon polishing, this paper discusses the influence of the final polishing slurry on polishing quality. The selection of components in the final polishing slurry is discussed. The abrasive of small size is used to reduce the surface roughness. The alkali without sodium ions is selected to reduce metal ions pollution. The relation between adsorption mechanism and the surfactant is analyzed. As a result, the nonsodium final polishing slurry with small particle size, high polishing rate and high quality is realized.
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Weiguo Di, Weiguo Di, Ming Yang, Ming Yang, Yuling Liu, Yuling Liu, } "Study of final polishing slurry for silicon substrate in ULSI", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842I (11 March 2008); doi: 10.1117/12.792138; https://doi.org/10.1117/12.792138
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