CVD growth of Ge films on graded Si1-xGex: C buffers

R. H. Wang; P. Han; Q. Mei; J. Wu; R. P. Ge; Z. L. Xie; X. Q. Xiu; S. L. Gu; Y. Shi; R. Zhang; Y. D. Zheng

doi:10.1117/12.792164

11 March 2008 CVD growth of Ge films on graded Si_1-xGe_x: C buffers

R. H. Wang, P. Han, Q. Mei, J. Wu, R. P. Ge, Z. L. Xie, X. Q. Xiu, S. L. Gu, Y. Shi, R. Zhang, Y. D. Zheng

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842M (2008) https://doi.org/10.1117/12.792164
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Ge films have been deposited on Si (100) substrates with graded Si_1-xGe_x:C buffers by chemical vapor deposition (CVD) method. Based on the Auger electron spectroscopy result, a growth model for the buffers has been proposed, in which the buffers are thought to be composed of two layers. One is the Si_1-xGe_x:C epilayer due to the reaction of GeH₄, C₂H₄ and Si atoms diffusing up from the substrate, and the other is the Si_1-xGe_x layer due to the reaction of Si and Ge atoms diffusing down from the Si_1-xGe_x:C epilayer. The energy dispersive spectroscopy result indicates that Ge atoms diffuse further when the growth temperature is higher, demonstrating the growth model indirectly. With the graded buffers, epitaxial Ge films show the perfect crystalline quality, and the excellent transport property with the electron mobility approaching that of bulk Ge materials at the same doping level.

Citation Download Citation

R. H. Wang, P. Han, Q. Mei, J. Wu, R. P. Ge, Z. L. Xie, X. Q. Xiu, S. L. Gu, Y. Shi, R. Zhang, and Y. D. Zheng "CVD growth of Ge films on graded Si_1-xGe_x: C buffers", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842M (11 March 2008); https://doi.org/10.1117/12.792164

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