MOCVD growth and annealing characteristics of Mg-doped AlGaN films

J. Yao; P. Han; Z. L. Xie; B. Liu; R. Zhang; R. L. Jiang; Q. J. Liu; F. Xu; H. M. Gong; Y. Shi; Y. D. Zheng

doi:10.1117/12.792263

11 March 2008 MOCVD growth and annealing characteristics of Mg-doped AlGaN films

J. Yao, P. Han, Z. L. Xie, B. Liu, R. Zhang, R. L. Jiang, Q. J. Liu, F. Xu, H. M. Gong, Y. Shi, Y. D. Zheng

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842N (2008) https://doi.org/10.1117/12.792263
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

We investigate the growth of Mg doped Al_xGa_1-xN films grown by metal organic chemical vapor deposition (MOCVD). The high temperature AlN interlayer can improve the quality of films, reducing the density of dislocations. With the increase of Al composition, the quality of films dramatically decreases, and a large number of island-shaped crystal nuclei can be observed, for three-dimensional growth mode of Mg-doped Al_xGa_1-xN can not be transformed into two-dimensional mode easily. Both the increase of Al composition and Cp₂Mg flux can increase the density of screw dislocations. The increase of Cp₂Mg flux can considerably increase the density of edge dislocations, while the increasing Al composition has little impact on the density of edge dislocations. Finally, annealing at 900°C for 15 minutes after growth is the ideal annealing condition for obtaining p-type Al_0.2Ga_0.8N, with hole concentration of 1.0×10¹⁷ cm^-3.

Citation Download Citation

J. Yao, P. Han, Z. L. Xie, B. Liu, R. Zhang, R. L. Jiang, Q. J. Liu, F. Xu, H. M. Gong, Y. Shi, and Y. D. Zheng "MOCVD growth and annealing characteristics of Mg-doped AlGaN films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842N (11 March 2008); https://doi.org/10.1117/12.792263

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