11 March 2008 MOCVD growth and annealing characteristics of Mg-doped AlGaN films
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842N (2008) https://doi.org/10.1117/12.792263
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
We investigate the growth of Mg doped AlxGa1-xN films grown by metal organic chemical vapor deposition (MOCVD). The high temperature AlN interlayer can improve the quality of films, reducing the density of dislocations. With the increase of Al composition, the quality of films dramatically decreases, and a large number of island-shaped crystal nuclei can be observed, for three-dimensional growth mode of Mg-doped AlxGa1-xN can not be transformed into two-dimensional mode easily. Both the increase of Al composition and Cp2Mg flux can increase the density of screw dislocations. The increase of Cp2Mg flux can considerably increase the density of edge dislocations, while the increasing Al composition has little impact on the density of edge dislocations. Finally, annealing at 900°C for 15 minutes after growth is the ideal annealing condition for obtaining p-type Al0.2Ga0.8N, with hole concentration of 1.0×1017 cm-3.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Yao, J. Yao, P. Han, P. Han, Z. L. Xie, Z. L. Xie, B. Liu, B. Liu, R. Zhang, R. Zhang, R. L. Jiang, R. L. Jiang, Q. J. Liu, Q. J. Liu, F. Xu, F. Xu, H. M. Gong, H. M. Gong, Y. Shi, Y. Shi, Y. D. Zheng, Y. D. Zheng, "MOCVD growth and annealing characteristics of Mg-doped AlGaN films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842N (11 March 2008); doi: 10.1117/12.792263; https://doi.org/10.1117/12.792263
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