11 March 2008 Wurtzite structure high Mg content ZnMgO thin films deposited by oxygen-plasma enhanced pulsed laser deposition
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842R (2008) https://doi.org/10.1117/12.792272
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Wurtzite structure ZnMgO thin films with the energy gap (Eg) of 4.2 eV were deposited by oxygen-plasma enhanced pulsed laser deposition (PEPLD) on quartz glass. Oxygen-plasma increases the Zn content in ZnMgO thin film, which induced the evolution from cubic to hexagonal structure. The effects of target-substrate (T-S) distance on the band gap and crystal quality of ZnMgO thin film deposited by PEPLD were studied by transmittance spectra and Raman. The band gap of ZnMgO increased from 3.84 eV to 4.03 eV and the crystal quality decrease gradually when the T-S distance decreased from 9 cm to 5 cm.
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Yanfei Gu, Yanfei Gu, Xiaomin Li, Xiaomin Li, J. F. Kong, J. F. Kong, C. Yang, C. Yang, W. Z. Shen, W. Z. Shen, Y. W. Zhang, Y. W. Zhang, W. D. Yu, W. D. Yu, X. D. Gao, X. D. Gao, } "Wurtzite structure high Mg content ZnMgO thin films deposited by oxygen-plasma enhanced pulsed laser deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842R (11 March 2008); doi: 10.1117/12.792272; https://doi.org/10.1117/12.792272
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