11 March 2008 The properties of ZnO thin films fabricated by ion beam sputtering and RF magnetron sputtering
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842T (2008) https://doi.org/10.1117/12.792278
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
ZnO thin films were prepared by two methods .One was ion beam sputtering then annealing at 700°C in O2, another was RF magnetron sputtering then annealing at 600°C in O2. The structures, morphologies, and electrical resistivities of the ZnO films prepared by two methods were investigated and compared. The influences of two different methods on properties of ZnO thin film were studied by XRD, AFM and LCR HITESTER. Compared with RF magnetron sputtering, the ZnO films fabricated by ion beam sputtering deposition have disordered growth orientation, bigger surface roughness and higher electrical resistivity.
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X. X. He, X. X. He, H. Q. Li, H. Q. Li, J. B. Gu, J. B. Gu, S. B. Wu, S. B. Wu, B. Cao, B. Cao, } "The properties of ZnO thin films fabricated by ion beam sputtering and RF magnetron sputtering", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842T (11 March 2008); doi: 10.1117/12.792278; https://doi.org/10.1117/12.792278
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