MOCVD growth of GaN films on Si-rich SiNx nanoislands patterned sapphire

Zhilai Fang; Shuping Li; Junyong Kang

doi:10.1117/12.792371

11 March 2008 MOCVD growth of GaN films on Si-rich SiN_x nanoislands patterned sapphire

Zhilai Fang, Shuping Li, Junyong Kang

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842V (2008) https://doi.org/10.1117/12.792371
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

We intentionally patterned Si-rich SiN_x nanoislands on sapphire substrates and found the SiN_x significantly influenced the subsequent growth of GaN films. Distinct GaN islands of triangular base were formed caused by the enhanced diffusion and regrowth anisotropy during the annealing processes of GaN nucleation layers. Subsequent growth of GaN epilayers at high temperature with initial low V/III ratios on the nucleated triangular islands resulted in island coarsening and shape variations from triangular to hexagonal due to the dominating gas phase transport growth mechanism and limited diffusion length. Further growth with high V/III ratios eventually resulted in layer-growth with surface roughness of ~2.6 Å. Both AFM and XRD results showed a significant improvement of the crystalline qualities with estimated threading dislocation (TD) density of about 1×10⁸ cm^-2 when Si-rich SiN_x nanoislands patterning was performed. Photoluminescence measurements showed that the yellow and blue emissions were substantially suppressed.

Citation Download Citation

Zhilai Fang, Shuping Li, and Junyong Kang "MOCVD growth of GaN films on Si-rich SiN_x nanoislands patterned sapphire", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842V (11 March 2008); https://doi.org/10.1117/12.792371

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