11 March 2008 Investigation of nanostructure on silicon by electrochemical etching
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842Z (2008) https://doi.org/10.1117/12.792382
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Fabrication of deep pores and trenches in nano-size will enable the embedded nanodevice integrated with silicon IC. However, the conventional dry etching method needs very expensive equipment and the process is quite complicated. Recently, electrochemical etching was developed to fabricate structures with high aspect ratio. Anodization was performed in a solution of HF with certain concentration mixed with ethanol by 1:1 in volume. The backside of the wafer was illuminated by a halogen lamp. The whole etching system was monitored by a computer system. It is found, in case of etching in a low current with 5%HF electrolyte, the size etched pores can be less than 100 nm. However, the deep trench structures becomes a line array of pores. Further work is in progress to investigate the detail.
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Liang Xu, Liang Xu, Jinchuan You, Jinchuan You, Lianwei Wang, Lianwei Wang, } "Investigation of nanostructure on silicon by electrochemical etching", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842Z (11 March 2008); doi: 10.1117/12.792382; https://doi.org/10.1117/12.792382
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