11 March 2008 High-performance AlGaN-GaN HEMT materials and devices grown and fabricated on Si substrates
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698435 (2008) https://doi.org/10.1117/12.792393
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Crack-free AlGaN-GaN HEMT materials with 1.2-μm-thick were grown on high-resistivity Si(111) substrates by MOCVD. The sample showed a high 2DEG mobility, 1350cm2/V•s at 300K and 5900cm2/V•s at 77K, respectively. High optical and structural qualities were confirmed by PL and XRD. The dc and rf characteristics of AlGaN-GaN microwave power devices with 0.4μm gate length and 1mm of the gate width were probed. The saturated drain current density was around 0.8A/mm, and the peak transconductance was beyond 230mS/mm. Tunning for a maximum output power of 5.1W, a gain of 9.1dB and a peak power-added efficiency (PAE) of 35% was obtained, respectively.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. H. Feng, Z. H. Feng, J. Y. Yin, J. Y. Yin, F. P. Yuan, F. P. Yuan, B. Liu, B. Liu, Z. Feng, Z. Feng, S. J. Cai, S. J. Cai, } "High-performance AlGaN-GaN HEMT materials and devices grown and fabricated on Si substrates", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698435 (11 March 2008); doi: 10.1117/12.792393; https://doi.org/10.1117/12.792393
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