11 March 2008 The heterojunction structure of n-Si/p-nanocrystalline diamond film for UV detection
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69843K (2008) https://doi.org/10.1117/12.792200
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
A heterostructure of nanocrystalline diamond film / n-Si was fabricated successfully, where the un-doped p-type nanocrystalline diamond (NCD) film was grown by an electron assisted hot filament chemical vapor deposition (EA-HFCVD) technology. The structure and morphology of the NCD film were analyzed by Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM). I-V characteristic of the p-NCD/n-Si heterojunction indicated that this structure was rectifying in nature with a turn-on voltage of ~0.5V. The p-NCD/n-Si heterostructure was also used for UV detector applications. Operating at a bias voltage of 10V, this photodetector showed a significant discrimination between UV and visible light, and the UV/visible-blind ratio was about three orders of magnitude.
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Linjun Wang, Linjun Wang, Jianmin Liu, Jianmin Liu, Run Xu, Run Xu, Jian Huang, Jian Huang, Weimin Shi, Weimin Shi, Yiben Xia, Yiben Xia, } "The heterojunction structure of n-Si/p-nanocrystalline diamond film for UV detection", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843K (11 March 2008); doi: 10.1117/12.792200; https://doi.org/10.1117/12.792200
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