11 March 2008 Fabrication and characterization of 3D pn junction structure for radiation detection
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69843M (2008) https://doi.org/10.1117/12.792237
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
In this report, p-type macroporous silicon has been prepared by anodization. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures on this macroporous silicon. I-V and C-V measurement were employed to characterize the electrical properties. The results were compared with numeric simulation with T-SUPREM4 and MEDICI. It has been demonstrated that three-dimensional structure can increase the effective junction area and the collective efficiency remarkably, and hence improve the performance of semiconductor radiation detector.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tingting Liu, Tingting Liu, Tao Liu, Tao Liu, Jinlong Li, Jinlong Li, Jilei Lin, Jilei Lin, Xiaoming Chen, Xiaoming Chen, Xinglong Guo, Xinglong Guo, Peisheng Xin, Peisheng Xin, Shaohui Xu, Shaohui Xu, Weijia Xue, Weijia Xue, Lianwei Wang, Lianwei Wang, } "Fabrication and characterization of 3D pn junction structure for radiation detection", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843M (11 March 2008); doi: 10.1117/12.792237; https://doi.org/10.1117/12.792237
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